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| HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 80N50 IXFN 75N50 D G S ID25 80 A 75 A RDS(on) 50 m 55 m 500 V 500 V S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C, Chip capability TC = 25C, pulse width limited by TJM TC = 25C 75N50 80N50 75N50 80N50 Maximum Ratings 500 500 20 30 75 80 300 320 80 V V V V A A A A A mJ J V/ns W C C C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 64 6 5 700 -55 ... +150 150 -55 ... +150 Either Source terminal of miniBLOC can be used as Main or Kelvin Source Features * International standard packages * miniBLOC, with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 200 TJ = 25C TJ = 125C 80N50 75N50 100 2 50 55 V V nA A mA m m * * * * Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % Advantages * Easy to mount * * Space savings High power density (c) 2002 IXYS All rights reserved 98538C (02/02) IXFN 75N50 IXFN 80N50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 50 70 9890 VGS = 0 V, VDS = 25 V, f = 1 MHz 1750 460 61 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), 70 102 27 380 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 80 173 0.18 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W A B C D E F G H J K L M N O P Q R S T U miniBLOC, SOT-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 15 V; ID = 0.5 * ID25, pulse test M4 screws (4x) supplied Dim. Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 75N50 80N50 75N50 80N50 75 80 300 320 1.3 250 1.2 8 A A A A V ns C A IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 30A, -di/dt = 100 A/s, VR = 100 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFN 75N50 IXFN 80N50 Figure 1. Output Characteristics at 25OC 100 TJ = 25OC Figure 2. Output Characteristics at 125OC 100 TJ = 125OC VGS = 9V 8V 7V 6V 5V 80 VGS = 9V 8V 7V 6V 80 ID - Amperes ID - Amperes 60 5V 60 40 20 40 20 4V 4V 0 0 0 1 2 3 4 5 0 2 4 6 8 10 VDS - Volts VDS - Volts 3.0 2.8 2.6 Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID VGS = 10V Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ 2.8 VGS = 10V RDS(ON) - Normalized RDS(ON) - Normalized TJ = 125 C O 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 60 70 80 TJ = 25OC 2.5 2.2 1.9 ID =40A ID = 80A 1.6 1.3 1.0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 100 80 Figure 6. Admittance Curves 50 40 ID - Amperes 60 40 20 0 ID - Amperes 30 TJ = 125oC 20 TJ = 25oC 10 0 4.0 -50 -25 0 25 50 75 100 125 150 4.5 5.0 5.5 6.0 6.5 7.0 7.5 TC - Degrees C VGS - Volts (c) 2002 IXYS All rights reserved IXFN 75N50 IXFN 80N50 Figure 7. Gate Charge 10 8 VDS = 250 V ID = 40 A IG = 10 mA Figure 8. Capacitance Curves 30000 10000 Ciss 6 4 2 0 0 50 100 150 200 250 300 350 400 Capacitance - pF f = 100kHz Coss VGS - Volts 1000 Crss 100 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS = 0V 80 ID - Amperes TJ = 125OC 60 40 TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 1.000 R(th)JC - K/W 0.100 Single Pulse 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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